半导体装置及半导体装置的制造方法

Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device and a method for manufacturing the same. A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semiconductor film may lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.
半导体装置及半导体装置的制造方法。当采用由金属材料构成的源电极及漏电极与氧化物半导体膜直接接触的薄膜晶体管的结构时,接触电阻会增高。接触电阻增高的原因之一是:在源电极及漏电极与氧化物半导体膜的接触面上形成肖特基结。本发明的技术要点是:在氧化物半导体膜与源电极及漏电极之间设置氧缺少氧化物半导体层,该氧缺少氧化物半导体层包含其尺寸为1nm至10nm以下的晶粒,并且其载流子浓度高于用作沟道形成区域的氧化物半导体膜。

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