半导体装置

Abstract

A semiconductor device includes a first base layer of a first conduction type. A second base layer of a second conduction type is provided above the first base layer. A first semiconductor layer of the first conduction type is above an opposite side of the second base layer to the first base layer. A second semiconductor layer of the second conduction type is above an opposite side of the first base layer to the second base-layer. A plurality of first electrodes are provided in the first semiconductor layer and the second base layer via first insulating films. A second electrode is provided between adjacent first electrodes and provided in the first semiconductor layer and the second semiconductor layer via a second insulating film. A resistance of the first base layer at the side of the second electrode is lower than a resistance of the first base layer at the side of a gate electrode.
一种半导体装置,具备第1导电型的第1基底层。第2导电型的第2基底层设在第1基底层上。第1导电型的第1半导体层设在第2基底层的与上述第1基底层相反的一侧。第2导电型的第2半导体层设在第1基底层的与第2基底层相反的一侧。多个第1电极隔着第1绝缘膜设在第1半导体层及第2基底层中。第2电极在相邻的第1电极之间、隔着第2绝缘膜设在第1半导体层及第2半导体层中。第2电极侧的第1基底层的电阻比栅极电极侧的第1基底层的电阻低。

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