一种反向导通场截止型绝缘栅双极型晶体管的制备方法

Manufacturing method of reverse conduction FS IGBT (field stop insulated gate bipolar transistor)

Abstract

The invention discloses a manufacturing method of a reverse conduction FS IGBT (field stop insulated gate bipolar transistor). The manufacturing method comprises the following steps of providing a first doping type of silicon substrate, and performing photoetching and etching to form a groove structure at one surface of the substrate; filling a second doping type of silicon into the groove, and forming a back PN alternating structure at the surface of the substrate; providing an N type silicon wafer, preparing an N+ layer at the surface of the N type silicon wafer, and diffusing to obtain a field stop layer; bonding the substrate and the N type silicon wafer together; adopting an IGBT face technology to prepare an IGBT face structure in and on a drift area; thinning the substrate of the bonding silicon wafer after the face technology to the back PN alternating structure; forming a back metal electrode at the surface of the back PN alternating structure. The manufacturing method has the advantages that the back PN alternating structure is directly manufactured on the substrate before the face technology; an FS layer is prepared by firstly injecting or scattering the N type silicon wafer and then diffusing at high temperature, and the N type silicon wafer is bonded with the substrate silicon wafer together to obtain a wafer which has the same thickness as the conventional circulating wafer, so the special wafer circulating equipment is not needed, and the cost is reduced.
本发明公开了一种反向导通FS IGBT的制造方法,包括:提供第一掺杂类型的硅衬底;通过光刻和刻蚀在衬底的一面形成凹槽结构;向凹槽内填充第二掺杂类型的硅,在衬底表面形成背面PN交隔结构;提供N型硅片,并在N型硅片表面制备出N+层,推阱后得到场截止层;将衬底和N型硅片键合在一起;采用IGBT正面工艺在漂移区内和漂移区上制备出IGBT正面结构;将完成了正面工艺的键合硅片的衬底减薄至背面PN交隔结构处;在背面PN交隔结构表面形成背面金属电极。本发明于正面工艺之前直接在衬底上制作背面PN交隔结构。FS层用N型硅片先注入(或扩散)再高温推阱方式制备,N型硅片与衬底硅片键合得到与常规流通圆片厚度相同的圆片,无需专用薄片流通设备,降低了成本。

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